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Title: Single crystalline Er{sub 2}O{sub 3}:sapphire films as potentially high-gain amplifiers at telecommunication wavelength

Single crystalline thin films of Er{sub 2}O{sub 3}, demonstrating efficient 1.5 μm luminescence of Er{sup 3+} at room temperature were grown on Al{sub 2}O{sub 3} substrate by molecular beam epitaxy. The absorption coefficient at 1.536 μm was found to reach 270 cm{sup −1} translating in a maximal possible gain of 1390 dBcm{sup −1}. In conjunction with the 10% higher refractive index as compared to Al{sub 2}O{sub 3}, this opens the possibility to use Er{sub 2}O{sub 3}:sapphire films as short-length waveguide amplifiers in telecommunication.
Authors:
; ; ; ;  [1]
  1. Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22391928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; AMPLIFIERS; ERBIUM IONS; ERBIUM OXIDES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; REFRACTIVE INDEX; SAPPHIRE; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS