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Title: Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.
Authors:
 [1] ;  [2] ; ; ; ; ; ;  [3] ; ;  [1]
  1. College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)
  2. (China)
  3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
Publication Date:
OSTI Identifier:
22391926
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON IONS; CADMIUM TELLURIDES; CDTE SEMICONDUCTOR DETECTORS; CRYSTAL DEFECTS; DOPED MATERIALS; INFRARED SPECTRA; ION IMPLANTATION; LASERS; MERCURY COMPOUNDS; MICROSCOPES; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; TEMPERATURE DEPENDENCE