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Title: Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observed response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.
Authors:
; ; ; ; ;  [1] ; ; ;  [2] ; ; ;  [3] ; ;  [4]
  1. Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin (Germany)
  2. Institut für Theoretische Physik, Technische Universität Berlin, Berlin (Germany)
  3. Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany)
  4. Technion Institute of Technology, Faculty of Electrical Engineering, Haifa (Israel)
Publication Date:
OSTI Identifier:
22391925
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; EXCITED STATES; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; LASERS; QUANTUM DOTS; REACTION KINETICS; TIME RESOLUTION