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Title: Self-limited underdense microplasmas in bulk silicon induced by ultrashort laser pulses

Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 10{sup 12 }W/cm{sup 2}. The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ≅10{sup 19 }cm{sup −3}, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the ∼100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses.
Authors:
; ; ; ;  [1] ;  [2]
  1. CNRS, LP3 UMR 7341, Aix-Marseille University, F-13288 Marseille (France)
  2. Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)
Publication Date:
OSTI Identifier:
22391923
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; DIELECTRIC MATERIALS; INFRARED RADIATION; LASER RADIATION; PERMITTIVITY; PHOTOIONIZATION; PLASMA; PULSES; SILICON