Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

Hashimoto, T.; Kamikawa, S.; Soriano, D.; Pedersen, J. G.; Roche, S.

doi:10.1063/1.4901279

Title: Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

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Abstract

Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

Authors:

Hashimoto, T.; Kamikawa, S.; Soriano, D. ^[1]; Pedersen, J. G. ^[1]; Roche, S. ^[1]

Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain)

Publication Date:: Mon Nov 03 00:00:00 EST 2014

OSTI Identifier:: 22391913

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COBALT; FERROMAGNETISM; GRAPHENE; HYDROGEN; MAGNETORESISTANCE; NANOSTRUCTURES; SILICA; SILICON OXIDES; SPIN; TUNNEL EFFECT

Citation Formats


                    Hashimoto, T., Kamikawa, S., Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp, Soriano, D., Pedersen, J. G., Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby, Roche, S., and ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4901279.

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                    Hashimoto, T., Kamikawa, S., Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp, Soriano, D., Pedersen, J. G., Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby, Roche, S., & ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode.  United States.  https://doi.org/10.1063/1.4901279

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                    Hashimoto, T., Kamikawa, S., Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp, Soriano, D., Pedersen, J. G., Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby, Roche, S., and ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona. 2014.  
        "Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode".  United States.  https://doi.org/10.1063/1.4901279.

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@article{osti_22391913,

  title        = {Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode},

  author       = {Hashimoto, T. and Kamikawa, S. and Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp and Soriano, D. and Pedersen, J. G. and Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby and Roche, S. and ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona},

  abstractNote = {Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.},

  doi          = {10.1063/1.4901279},

  url          = {https://www.osti.gov/biblio/22391913},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 18,

  volume       = 105,

  place        = {United States},

  year         = {Mon Nov 03 00:00:00 EST 2014},

  month        = {Mon Nov 03 00:00:00 EST 2014}

}

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