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Title: Doped silicon nanocrystals from organic dopant precursor by a SiCl{sub 4}-based high frequency nonthermal plasma

Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl{sub 4}, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.
Authors:
; ;  [1] ;  [2]
  1. Department of Mechanical Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550 (Japan)
  2. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22391912
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRON SPIN RESONANCE; HYDROGEN; NANOSTRUCTURES; PHOSPHORUS COMPOUNDS; PLASMA; SILICON; SILICON CHLORIDES; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY