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Title: Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer and more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.
Authors:
; ; ; ; ; ;  [1]
  1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
Publication Date:
OSTI Identifier:
22391910
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CLATHRATES; CRYSTALS; EPITAXY; GRAPHENE; HYDROGEN 4; LAYERS; RAMAN SPECTROSCOPY; SILICON CARBIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K