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Title: Recombination dynamics in In{sub x}Ga{sub 1−x}N quantum wells—Contribution of excited subband recombination to carrier leakage

The recombination dynamics of In{sub x}Ga{sub 1−x}N single quantum wells are investigated. By comparing the photoluminescence (PL) decay spectra with simulated emission spectra obtained by a Schrödinger-Poisson approach, we give evidence that recombination from higher subbands contributes the emission of the quantum well at high excitation densities. This recombination path appears as a shoulder on the high energy side of the spectrum at high charge carrier densities and exhibits decay in the range of ps. Due to the lower confinement of the excited subband states, a distinct proportion of the probability density function lies outside the quantum well, thus contributing to charge carrier loss. By estimating the current density in our time resolved PL experiments, we show that the onset of this loss mechanism occurs in the droop relevant regime above 20 A/cm{sup 2}.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Leibniz Institute for Crystal Growth, Max-Born Str. 2, 12489 Berlin (Germany)
  2. OSRAM Opto Semiconductors, Leibnizstr. 4, 93055 Regensburg (Germany)
  3. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
Publication Date:
OSTI Identifier:
22391887
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE CARRIERS; CURRENT DENSITY; EMISSION SPECTRA; GALLIUM NITRIDES; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; PROBABILITY DENSITY FUNCTIONS; QUANTUM WELLS; RECOMBINATION; SIMULATION