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Title: Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.
Authors:
 [1] ;  [2] ;  [3]
  1. Punjab Institute of Technology, Mohali-140501 (India)
  2. SUSCET, Tangori/Punjab Technical University, Jalandhar (India)
  3. Department of Applied Science, PEC University of Technology, Chandigarh-160012 (India)
Publication Date:
OSTI Identifier:
22391722
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CUBIC LATTICES; ELECTRIC CONDUCTIVITY; GRAIN ORIENTATION; NANOSTRUCTURES; NONLINEAR PROBLEMS; PHOTOSENSITIVITY; SYNTHESIS; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES