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Title: The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India)
  2. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India)
  3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)
Publication Date:
OSTI Identifier:
22391695
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT 60; COMPARATIVE EVALUATIONS; ELECTRICAL PROPERTIES; GAMMA RADIATION; GERMANIUM; GERMANIUM SILICIDES; GHZ RANGE; HETEROJUNCTIONS; IRRADIATION; JUNCTION TRANSISTORS; MEV RANGE; PELLETRON ACCELERATORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RELIABILITY; SEMICONDUCTOR MATERIALS; SILICON