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Title: Damage correlations in semiconductor devices exposed to gamma and high energy swift heavy ions

NPN rf power transistors and N-channel depletion MOSFETs are irradiated by different high energy swift heavy ions and {sup 60}Co gamma radiation in the dose range of 100 krad to 100 Mrad. The damage created by different heavy ions and {sup 60}Co gamma radiation in NPN rf power transistors and N-channel depletion MOSFETs have been correlated and studied in the same dose range. The recoveries in the electrical characteristics of different swift heavy ions and {sup 60}Co gamma irradiated devices have been studied after annihilation.
Authors:
 [1] ;  [2]
  1. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India)
  2. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570 006 (India)
Publication Date:
OSTI Identifier:
22391694
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COBALT 60; CORRELATIONS; GAMMA RADIATION; HEAVY IONS; IRRADIATION; MOSFET; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RF SYSTEMS; SEMICONDUCTOR MATERIALS