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Title: Energy spectrum of D{sup 0} centre in a spherical Gaussian quantum dot

The properties of a neutral hydrogenic donor (D{sup 0}) centres have been studied for a GaAs semiconductor quantum dot with the Gaussian confinement potential. The energy levels of the ground state (n = 1) and the excited states of both the first excited (n = 2) and second excited (n = 3) configurations have been calculated by variational method. It has been shown that the excited states of the (D{sup 0}) centre in quantum dot are bound for sufficiently strong confinement potential. The conditions of binding for the ground state as well as excited states have been determined as functions of the potential strength and quantum dot radius. The ground state electron energy is compared with those available in the literature.
Authors:
;  [1]
  1. School of Physics, University of Hyderabad, Hyderabad-500046, Telangana (India)
Publication Date:
OSTI Identifier:
22391692
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COLOR CENTERS; COMPARATIVE EVALUATIONS; CONFINEMENT; ELECTRONS; ENERGY SPECTRA; EXCITED STATES; GALLIUM ARSENIDES; GROUND STATES; POTENTIALS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPHERICAL CONFIGURATION; VARIATIONAL METHODS