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Title: 248nm silicon photoablation: Microstructuring basics

248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.
Authors:
; ; ;  [1]
  1. Advanced Multidisciplinary MEMS-Based Integrated Electronic NCER Centre of Excellent (AMBIENCE), School of Microelectronic Engineering, Universiti Malaysia Perlis, 02600 Arau, Perlis (Malaysia)
Publication Date:
OSTI Identifier:
22391683
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1660; Journal Issue: 1; Conference: ICoMEIA 2014: International Conference on Mathematics, Engineering and Industrial Applications 2014, Penang (Malaysia), 28-30 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; ABLATION; ELECTROMAGNETIC PULSES; ENERGY LEVELS; FABRICATION; KRYPTON FLUORIDE LASERS; LASER RADIATION; MEMS; MICROSTRUCTURE; PULSED IRRADIATION; SILICON; SURFACE TREATMENTS