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Title: Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.
Authors:
; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia)
  2. (Malaysia)
Publication Date:
OSTI Identifier:
22391671
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1660; Journal Issue: 1; Conference: ICoMEIA 2014: International Conference on Mathematics, Engineering and Industrial Applications 2014, Penang (Malaysia), 28-30 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; CADMIUM SULFIDES; CARRIER DENSITY; DEPOSITION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; HALL EFFECT; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION