Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y.; Amin, N.

doi:10.1063/1.4915766

Title: Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

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Abstract

In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

Authors:

Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y. ^[1]; Amin, N. ^[1]

Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia)

Publication Date:: Fri May 15 00:00:00 EDT 2015

OSTI Identifier:: 22391671

Resource Type:: Journal Article

Journal Name:: AIP Conference Proceedings

Additional Journal Information:: Journal Volume: 1660; Journal Issue: 1; Conference: ICoMEIA 2014: International Conference on Mathematics, Engineering and Industrial Applications 2014, Penang (Malaysia), 28-30 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; CADMIUM SULFIDES; CARRIER DENSITY; DEPOSITION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; HALL EFFECT; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION

Citation Formats


                    Islam, M. A., Rahman, K. S., Haque, F., Rashid, M. J., Akhtaruzzaman, M., Sopian, K., Sulaiman, Y., Amin, N., and Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4915766.

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                    Islam, M. A., Rahman, K. S., Haque, F., Rashid, M. J., Akhtaruzzaman, M., Sopian, K., Sulaiman, Y., Amin, N., & Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering.  United States.  https://doi.org/10.1063/1.4915766

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                    Islam, M. A., Rahman, K. S., Haque, F., Rashid, M. J., Akhtaruzzaman, M., Sopian, K., Sulaiman, Y., Amin, N., and Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi. 2015.  
        "Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering".  United States.  https://doi.org/10.1063/1.4915766.

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@article{osti_22391671,

  title        = {Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering},

  author       = {Islam, M. A. and Rahman, K. S. and Haque, F. and Rashid, M. J. and Akhtaruzzaman, M. and Sopian, K. and Sulaiman, Y. and Amin, N. and Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi},

  abstractNote = {In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.},

  doi          = {10.1063/1.4915766},

  url          = {https://www.osti.gov/biblio/22391671},
  journal      = {AIP Conference Proceedings},

  issn         = {0094-243X},

  number       = 1,

  volume       = 1660,

  place        = {United States},

  year         = {Fri May 15 00:00:00 EDT 2015},

  month        = {Fri May 15 00:00:00 EDT 2015}

}

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