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Title: The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.
Authors:
; ; ; ;  [1]
  1. School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)
Publication Date:
OSTI Identifier:
22391670
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1660; Journal Issue: 1; Conference: ICoMEIA 2014: International Conference on Mathematics, Engineering and Industrial Applications 2014, Penang (Malaysia), 28-30 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 30 DIRECT ENERGY CONVERSION; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; PERFORMANCE; QUANTUM EFFICIENCY; SOLAR CELLS; SOLAR ENERGY CONVERSION