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Title: Stability of the anodic growth porous tungsten oxide in different solutions

This article presents the study of the stability of the anodic growth porous tungsten oxide (WO{sub 3}) film in different solutions. As-anodized films are relatively stable in acidic electrolytes like sulphuric acid (H{sub 2}SO{sub 4}), hydrochloric acid (HCl) but not in oxalic acid. In higher pH solution, rate of dissolution of the WO{sub 3} film is higher. Annealing at 400 °C for 2 h transform the as-grown sample from amorphous phase to the crystalline phase and this significantly improve the stability of the film in high pH solution. Photocurrent measurements reveal that there is no significant difference of the electrolyte used (0.5 M H{sub 2}SO{sub 4}, 0.33 M H{sub 3}PO{sub 4}, 0.1 M sodium sulfate (Na{sub 2}SO{sub 4})) on the photocurrent. As-annealed films exhibit good stablility for the long photoelectrochemical (PEC) measurements (1700 s) in 0.5 M H{sub 2}SO{sub 4} and 0.1 M Na{sub 2}SO{sub 4}. There is no effect on the photocurrent for the variation of the concentration of the acidic solution (H{sub 2}SO{sub 4}). However, lower photocurrent was obtained as the concentration of Na{sub 2}SO{sub 4} was increased.
Authors:
; ;  [1]
  1. Nano-Optoelectronic Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)
Publication Date:
OSTI Identifier:
22391667
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1660; Journal Issue: 1; Conference: ICoMEIA 2014: International Conference on Mathematics, Engineering and Industrial Applications 2014, Penang (Malaysia), 28-30 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; CONCENTRATION RATIO; CRYSTAL GROWTH; HYDROCHLORIC ACID; OXALIC ACID; PH VALUE; PHASE STABILITY; PHOSPHORIC ACID; PHOTOCURRENTS; POROUS MATERIALS; SODIUM SULFATES; SULFURIC ACID; THIN FILMS; TUNGSTEN OXIDES