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Title: Boron nitride nanowires synthesis via a simple chemical vapor deposition at 1200 °C

A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 °C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of ∼20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronic devices with uniform electronic properties.
Authors:
; ; ;  [1]
  1. Department of Physics, Faculty of Science University of Malaya 50603 Kuala Lumpur Malaysia (Malaysia)
Publication Date:
OSTI Identifier:
22391542
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1657; Journal Issue: 1; Conference: PERFIK 2014: National Physics Conference 2014, Kuala Lumpur (Malaysia), 18-19 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NANOWIRES; NEUTRON CAPTURE THERAPY; NEUTRON DETECTORS; RAMAN SPECTROSCOPY; SOLIDS; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY