Boron nitride nanowires synthesis via a simple chemical vapor deposition at 1200 °C

Journal Article · Fri Apr 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915217· OSTI ID:22391542

Ahmad, Pervaiz; Khandaker, Mayeen Uddin; Amin, Yusoff Mohd; Khan, Ziaul Raza ^[1]

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1. Department of Physics, Faculty of Science University of Malaya 50603 Kuala Lumpur Malaysia (Malaysia)

A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 °C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of ∼20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronic devices with uniform electronic properties.

• OSTI ID: 22391542
• Journal Information: AIP Conference Proceedings, Vol. 1657, Issue 1; Conference: PERFIK 2014: National Physics Conference 2014, Kuala Lumpur (Malaysia), 18-19 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BORON NITRIDES
CHEMICAL VAPOR DEPOSITION
MORPHOLOGY
NANOWIRES
NEUTRON CAPTURE THERAPY
NEUTRON DETECTORS
RAMAN SPECTROSCOPY
SOLIDS
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY