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Title: Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.
Authors:
; ;  [1]
  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)
Publication Date:
OSTI Identifier:
22391541
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1657; Journal Issue: 1; Conference: PERFIK 2014: National Physics Conference 2014, Kuala Lumpur (Malaysia), 18-19 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARGON; COPPER; COPPER OXIDES; CUBIC LATTICES; EV RANGE; FIELD EMISSION; GRAIN SIZE; MONOCLINIC LATTICES; MORPHOLOGY; OPTICAL PROPERTIES; OXYGEN; POLYCRYSTALS; RADIOWAVE RADIATION; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION; X-RAY SPECTROSCOPY