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Title: Intermediate band solar cell simulation use InAs quantum dot in GaAs

Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%.
Authors:
; ; ;  [1]
  1. Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division Department of Physics, Institut Teknologi Bandung (Indonesia)
Publication Date:
OSTI Identifier:
22391491
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1656; Journal Issue: 1; Conference: APS 2012: 5. Asian Physics Symposium, Bandung (Indonesia), 10-12 Jul 2012; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; CALCULATION METHODS; CAPTURE; COMPUTERIZED SIMULATION; EFFICIENCY; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; SOLAR CELLS; VISIBLE RADIATION; VISIBLE SPECTRA