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Title: Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.
Authors:
; ; ; ;  [1]
  1. Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)
Publication Date:
OSTI Identifier:
22391476
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1656; Journal Issue: 1; Conference: APS 2012: 5. Asian Physics Symposium, Bandung (Indonesia), 10-12 Jul 2012; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATOMIC FORCE MICROSCOPY; CARBON; CRYSTAL STRUCTURE; DEPOSITION; HYDROFLUORIC ACID; LAYERS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; SUBSTRATES; SURFACE TREATMENTS; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS