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Title: Cs-doped Mo as surface converter for H{sup −}/D{sup −} generation in negative ion sources: First steps and proof of principle

In a proof-of-principle study, molybdenum samples were implanted with a very small dose of Cs in order to test the properties of the compound as a surface converter for negative hydrogen ion production. First results on the properties of Cs doped Mo compounds show a reduction of the work function and a stable H{sup −} yield up to four hours in low density hydrogen plasma. The implanted Cs atoms were stable in the Mo lattice over one year for samples stored in vacuum and not exposed to the plasma. The surface H{sup −} generation mechanisms were identified and a comparison of the negative ion yield with pure Mo showed that the Cs doped Mo sample’s yield was much larger.
Authors:
; ; ; ; ; ; ; ;  [1] ; ;  [2]
  1. Max-Planck-Institut für Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching (Germany)
  2. Aix Marseille University, CNRS, PIIM, UMR 7345, F-13013 Marseille (France)
Publication Date:
OSTI Identifier:
22391395
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1655; Journal Issue: 1; Conference: NIBS 2014: 4. International Symposium on Negative Ions, Beams and Sources, Garching (Germany), 6-10 Oct 2014; Other Information: (c) 2015 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 07 ISOTOPES AND RADIATION SOURCES; ATOMS; COMPARATIVE EVALUATIONS; DOPED MATERIALS; HYDROGEN; HYDROGEN IONS 1 MINUS; ION SOURCES; MOLYBDENUM; MOLYBDENUM COMPOUNDS; PLASMA; PLASMA DENSITY; SURFACES; WORK FUNCTIONS; YIELDS