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Title: Analytical admittance characterization of high mobility channel

In this contribution, we investigate the small-signal admittance of the high electron mobility transistors field-effect channels under a continuation branching of the current between channel and gate by using an analytical model. The analytical approach takes into account the linearization of the 2D Poisson equation and the drift current along the channel. The analytical equations discuss the frequency dependence of the admittance at source and drain terminals on the geometrical transistor parameters.
Authors:
;  [1] ;  [2]
  1. Institute of Science and Technology, University of Bechar (Algeria)
  2. Institute of Electronics of the South (IES - CNRS UMR 5214), University of Montpellier (France)
Publication Date:
OSTI Identifier:
22391318
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1653; Journal Issue: 1; Conference: APMAS 2014: 4. International Congress in Advances in Applied Physics and Materials Science, Fethiye (Turkey), 24-27 Apr 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BRANCHING RATIO; ELECTRIC CURRENTS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; FREQUENCY DEPENDENCE; MATHEMATICAL MODELS; POISSON EQUATION; SIGNALS; TWO-DIMENSIONAL CALCULATIONS