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Title: Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.
Authors:
; ; ; ;  [1] ; ; ; ;  [2]
  1. LGEP, CNRS UMR8507, SUPELEC, Univ Paris-Sud, Sorbonne Universités - UPMC, Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France)
  2. Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330 (Thailand)
Publication Date:
OSTI Identifier:
22391190
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1649; Journal Issue: 1; Conference: IRAGO Conference 2014, Tsukuba-city, Ibaraki (Japan), 6-7 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; BACTERIA; COUPLING; CRYSTALLOGRAPHY; ENERGY SPECTRA; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTOLUMINESCENCE; QUANTUM DOTS; RED SHIFT; TEMPERATURE DEPENDENCE