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Title: Influence of pre-stress fields on electric properties of semiconductor nanowires

The effects of pre-stress field on the electric properties such as electron-acoustic phonon interaction and mobility are investigated for a rectangular silicon nanowire. The continuum elastic model is employed to calculate the spatially confined phonon dispersion relation. The electron-acoustic phonon scattering rate and the carrier mobility are obtained for stressed silicon nanowire. The numerical results show that the pre-stress field has a significant influence on the phonon properties, leading to completely altering the electron-acoustic phonon interaction. Under the tensile (compressive) pre-stress, the carrier mobility is reduced (enhanced) that is sensitive to the strength of corresponding stress fields.
Authors:
 [1]
  1. Department of Engineering Mechanics, Zhejiang University, 38 Zheda Road, Hangzhou 310027, Zhejiang Provience, P.R.China (China)
Publication Date:
OSTI Identifier:
22391091
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1648; Journal Issue: 1; Conference: ICNAAM-2014: International Conference on Numerical Analysis and Applied Mathematics 2014, Rhodes (Greece), 22-28 Sep 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; DISPERSION RELATIONS; ELECTRICAL PROPERTIES; ELECTRON-PHONON COUPLING; ELECTRONS; NANOWIRES; PHONONS; SCATTERING; SEMICONDUCTOR MATERIALS; SILICON; STRESSES