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Title: Electron microscopy study of Ni induced crystallization in amorphous Si thin films

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.
Authors:
; ;  [1] ;  [2] ; ; ;  [3] ;  [4]
  1. Institute for Technical Physics and Matl. Sci., Research Centre for Natural Sciences, Hungarian Academy of Sciences, 1121 Budapest, Konkoly-Thege u. 29-33 (Hungary)
  2. Institute for Technical Physics and Matl. Sci., Research Centre for Natural Sciences, Hungarian Academy of Sciences, 1121 Budapest, Konkoly-Thege u. 29-33, Hungary and Doctoral School of Physics at Eötvös Loránd University, 1117 (Hungary)
  3. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)
  4. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 (Germany)
Publication Date:
OSTI Identifier:
22391023
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1646; Journal Issue: 1; Conference: NANOTEXNOLOGY 2014: International Conferences and Exhibition on Nanotechnologies and Organic Electronics, Thessaloniki (Greece), 5-12 Jul 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; CRYSTALLIZATION; HEATING; NICKEL; NICKEL SILICIDES; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY