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Title: Design and fabrication of a MEMS chevron-type thermal actuator

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4908578· OSTI ID:22391022
 [1]; ; ;  [2]; ; ; ;  [3]
  1. Laboratory of Modeling, Simulation and CAD, National Institute for R and D in Microtechnologies - IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190, Bucharest, Romania and University Politehnica of Bucharest (Romania)
  2. Laboratory of Modeling, Simulation and CAD, National Institute for R and D in Microtechnologies - IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190, Bucharest (Romania)
  3. Laboratory of Micro and Nano Systems, Technical University of Cluj-Napoca, Bd. Muncii, no. 103-105, 400641 Cluj-Napoca (Romania)

This paper presents the design and fabrication of a MEMS chevron-type thermal actuator. The device was designed for fabrication in the standard MEMS technology, where the topography of the upper layers depends on the patterns of structural and sacrificial layers underneath. The proposed actuator presents some advantages over usual thermal vertical chevron actuators by means of low operating voltages, high output force and linear movement without deformation of the shaft. The device simulations were done using COVENTOR software. The movement obtained by simulation was 12 μm, for a voltage of 0.2 V and the current intensity of 257 mA. The design optimizes the in-plane displacement by fixed anchors and beam inclination angle. Heating is provided by Joule dissipation. The material used for manufacture of chevron-based actuator was aluminum due to its thermal and mechanical properties. The release of the movable part was performed using isotropic dry etching by Reactive Ion Etching (RIE). A first inspection was achieved using Scanning Electron Microscope (SEM). In order to obtain the in-plane displacement we carried out electrical measurements. The thermal actuator can be used for a variety of optical and microassembling applications. This kind of thermal actuator could be integrated easily with other micro devices since its fabrication is compatible with the general semiconductor processes.

OSTI ID:
22391022
Journal Information:
AIP Conference Proceedings, Vol. 1646, Issue 1; Conference: NANOTEXNOLOGY 2014: International Conferences and Exhibition on Nanotechnologies and Organic Electronics, Thessaloniki (Greece), 5-12 Jul 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English