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Title: Antibonding hole ground state in InAs quantum dot molecules

Using four-band k⋅p Hamiltonians, we study how strain and position-dependent effective masses influence hole tunneling in vertically coupled InAs/GaAs quantum dots. Strain reduces the tunneling and hence the critical interdot distance required for the ground state to change from bonding to antibonding. Variable mass has the opposite effect and a rough compensation leaves little affected the critical bonding-to-antibonding ground state crossover. An alternative implementation of the magnetic field in the envelope function Hamiltonian is given which retrieves the experimental denial of possible after growth reversible magnetically induced bonding-to-antibonding ground state transition, predicted by the widely used Luttinger-Kohn Hamiltonian.
Authors:
 [1]
  1. Departament de Química Física i Analítica, Universitat Jaume I, E-12080, Castelló (Spain)
Publication Date:
OSTI Identifier:
22390881
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1642; Journal Issue: 1; Conference: ICCMSE-2010: International Conference of Computational Methods in Sciences and Engineering 2010, Kos (Greece), 3-8 Oct 2010; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; EFFECTIVE MASS; GALLIUM ARSENIDES; GROUND STATES; HAMILTONIANS; HOLES; INDIUM ARSENIDES; MAGNETIC FIELDS; MOLECULES; QUANTUM DOTS; STRAINS; TUNNEL EFFECT