First multicharged ion irradiation results from the CUEBIT facility at Clemson University

Journal Article · Fri Jan 09 00:00:00 EST 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4905410· OSTI ID:22390842

Shyam, R.; Kulkarni, D. D.; Field, D. A.; Srinadhu, E. S.; Harriss, J. E. ^[1]; Cutshall, D. B.; Harrell, W. R. ^[2]; Sosolik, C. E. ^[3]

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1. Department of Physics and Astronomy, Clemson University, Clemson, South Carolina, 29634 (United States)
2. Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina, 29634 (United States)
3. Department of Physics and Astronomy, Clemson University, Clemson, South Carolina, 29634 USA and Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina, 29634 (United States)

A new electron beam ion trap (EBIT) based ion source and beamline were recently commissioned at Clemson University to produce decelerated beams of multi- to highly-charged ions for surface and materials physics research. This user facility is the first installation of a DREEBIT-designed superconducting trap and ion source (EBIS-SC) in the U.S. and includes custom-designed target preparation and irradiation setups. An overview of the source, beamline, and other facilities as well as results from first measurements on irradiated targets are discussed here. Results include extracted charge state distributions and first data on a series of irradiated metal-oxide-semiconductor (MOS) device targets. For the MOS devices, we show that voltage-dependent capacitance can serve as a record of the electronic component of ion stopping power for an irradiated, encapsulated oxide target.

• OSTI ID: 22390842
• Journal Information: AIP Conference Proceedings, Vol. 1640, Issue 1; Conference: 12. International Symposium on Electron Beam Ion Sources and Traps, East Lansing, MI (United States), 18-21 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
74 ATOMIC AND MOLECULAR PHYSICS
CAPACITANCE
CHARGE STATES
DESIGN
EDUCATIONAL FACILITIES
ELECTRIC POTENTIAL
ELECTRON BEAM ION SOURCES
ELECTRON BEAMS
IRRADIATION
MOS TRANSISTORS
MULTICHARGED IONS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
STOPPING POWER
SURFACES
TRAPS