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Title: First multicharged ion irradiation results from the CUEBIT facility at Clemson University

A new electron beam ion trap (EBIT) based ion source and beamline were recently commissioned at Clemson University to produce decelerated beams of multi- to highly-charged ions for surface and materials physics research. This user facility is the first installation of a DREEBIT-designed superconducting trap and ion source (EBIS-SC) in the U.S. and includes custom-designed target preparation and irradiation setups. An overview of the source, beamline, and other facilities as well as results from first measurements on irradiated targets are discussed here. Results include extracted charge state distributions and first data on a series of irradiated metal-oxide-semiconductor (MOS) device targets. For the MOS devices, we show that voltage-dependent capacitance can serve as a record of the electronic component of ion stopping power for an irradiated, encapsulated oxide target.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Department of Physics and Astronomy, Clemson University, Clemson, South Carolina, 29634 (United States)
  2. Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina, 29634 (United States)
  3. Department of Physics and Astronomy, Clemson University, Clemson, South Carolina, 29634 USA and Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina, 29634 (United States)
Publication Date:
OSTI Identifier:
22390842
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1640; Journal Issue: 1; Conference: 12. International Symposium on Electron Beam Ion Sources and Traps, East Lansing, MI (United States), 18-21 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 74 ATOMIC AND MOLECULAR PHYSICS; CAPACITANCE; CHARGE STATES; DESIGN; EDUCATIONAL FACILITIES; ELECTRIC POTENTIAL; ELECTRON BEAM ION SOURCES; ELECTRON BEAMS; IRRADIATION; MOS TRANSISTORS; MULTICHARGED IONS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; STOPPING POWER; SURFACES; TRAPS