Deterministic doping and the exploration of spin qubits
- Accelerator and Fusion Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)
- Global Foundries, Malta, NY 12020 (United States)
- Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)
Deterministic doping by single ion implantation, the precise placement of individual dopant atoms into devices, is a path for the realization of quantum computer test structures where quantum bits (qubits) are based on electron and nuclear spins of donors or color centers. We present a donor - quantum dot type qubit architecture and discuss the use of medium and highly charged ions extracted from an Electron Beam Ion Trap/Source (EBIT/S) for deterministic doping. EBIT/S are attractive for the formation of qubit test structures due to the relatively low emittance of ion beams from an EBIT/S and due to the potential energy associated with the ions' charge state, which can aid single ion impact detection. Following ion implantation, dopant specific diffusion mechanisms during device processing affect the placement accuracy and coherence properties of donor spin qubits. For bismuth, range straggling is minimal but its relatively low solubility in silicon limits thermal budgets for the formation of qubit test structures.
- OSTI ID:
- 22390841
- Journal Information:
- AIP Conference Proceedings, Vol. 1640, Issue 1; Conference: 12. International Symposium on Electron Beam Ion Sources and Traps, East Lansing, MI (United States), 18-21 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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