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Title: Measurements of radiation effects on a 4 Mb PSRAM memory

The results of a static test of total ionizing dose (TID) effects on an ISSI 4Mb PSRAM memory are reported in this work. The irradiation was performed at the IEAv’s Laboratory of Ionizing Radiation with 1.17 and 1.32 MeV gamma-rays from a {sup 60}Co source at a dose rate of 2.5 krad/h up to an accumulated dose of 215.7 krad. The TID threshold for bit flip found in this experiment was 52.5 krad. From a sampling of 4096 memory addresses it was estimated a bit flip rate of approximately 50% at an accumulated dose of 215.7 krad.
Authors:
; ; ;  [1] ; ;  [2]
  1. Instituto de Estudos Avançados (IEAv/DCTA) - São José dos Campos, SP (Brazil)
  2. Universidade Federal do Rio Grande do Sul (UFRGS) - Porto Alegre, RS (Brazil)
Publication Date:
OSTI Identifier:
22390505
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1625; Journal Issue: 1; Conference: 36. Brazilian Workshop on Nuclear Physics, Sao Sebastiao, SP (Brazil), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPES AND RADIATION SOURCES; APPROXIMATIONS; COBALT 60; DOSE RATES; GAMMA RADIATION; IRRADIATION; MEMORY DEVICES; MEV RANGE; RADIATION DOSES; RADIATION EFFECTS