Electronic system for data acquisition to study radiation effects on operating MOSFET transistors
- Centro Universitário da FEI, São Bernardo do Campo (Brazil)
- Instituto de Física da USP, São Paulo (Brazil)
In this work we present the development of an acquisition system for characterizing transistors under X-ray radiation. The system is able to carry out the acquisition and to storage characteristic transistor curves. To test the acquisition system we have submitted polarized P channel MOS transistors under continuous 10-keV X-ray doses up to 1500 krad. The characterization system can operate in the saturation region or in the linear region in order to observe the behavior of the currents or voltages involved during the irradiation process. Initial tests consisted of placing the device under test (DUT) in front of the X-ray beam direction, while its drain current was constantly monitored through the prototype generated in this work, the data are stored continuously and system behavior was monitored during the test. In order to observe the behavior of the DUT during the radiation tests, we used an acquisition system that consists of an ultra-low consumption16-bit Texas Instruments MSP430 microprocessor. Preliminary results indicate linear behavior of the voltage as a function of the exposure time and fast recovery. These features may be favorable to use this device as a radiation dosimeter to monitor low rate X-ray.
- OSTI ID:
- 22390463
- Journal Information:
- AIP Conference Proceedings, Vol. 1625, Issue 1; Conference: 36. Brazilian Workshop on Nuclear Physics, Sao Sebastiao, SP (Brazil), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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