skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Equivalent circuit-level model and improvement of terahertz quantum cascade lasers

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ; ;  [1]
  1. State Key Lab. of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Peoples Republic of China (China)

An equivalent circuit-level model of terahertz (THz) quantum cascade lasers (QCLs) is developed by using rate equations. This model can be employed to investigate the characteristics of THz QCLs accurately and to improve their design. We use the circuit-level model to analyse a new active structure, which can improve the performance of THz QCLs by means of enhancing carrier injection. The simulation result shows that THz QCLs with the new active structure have a much higher performance compared with conventional THz QCLs. The high-performance THz QCLs are expected to be operated at higher temperatures. (lasers)

OSTI ID:
22375926
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 44, Issue 4; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
Country of Publication:
United States
Language:
English

Similar Records

Two-well terahertz quantum cascade lasers with suppressed carrier leakage
Journal Article · Mon Sep 11 00:00:00 EDT 2017 · Applied Physics Letters · OSTI ID:22375926

Room temperature negative differential resistance in terahertz quantum cascade laser structures
Journal Article · Wed Aug 24 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:22375926

Room temperature negative differential resistance in terahertz quantum cascade laser structures
Journal Article · Mon Aug 22 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:22375926