Substrate-emitting semiconductor laser with a trapezoidal active region

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2014V044N04ABEH015370· OSTI ID:22375925

Dikareva, N V; Nekorkin, S M; Karzanova, M V; Zvonkov, B N ^[1]; Aleshkin, V Ya; Dubinov, A A ^[2]; Afonenko, A A ^[3]

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1. Scientific-Research Physicotechnical Institute at the N.I.Lobachevsky State University of Nizhnii Novgorod (National Research University), Nizhnii Novgorod (Russian Federation)
2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod (Russian Federation)
3. Belarusian State University, Minsk (Belarus)

Semiconductor lasers with a narrow (∼2°) directional pattern in the planes both parallel and perpendicular to the p–n junction are fabricated. To achieve a low radiation divergence in the p–n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p–n junction was ensured by the use of a leaky mode, through which more than 90% of laser power was coupled out. (lasers)

• OSTI ID: 22375925
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 44, Issue 4; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
P-N JUNCTIONS
SEMICONDUCTOR LASERS
SUBSTRATES
WAVEGUIDES