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Title: Substrate-emitting semiconductor laser with a trapezoidal active region

Semiconductor lasers with a narrow (∼2°) directional pattern in the planes both parallel and perpendicular to the p–n junction are fabricated. To achieve a low radiation divergence in the p–n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p–n junction was ensured by the use of a leaky mode, through which more than 90% of laser power was coupled out. (lasers)
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. Scientific-Research Physicotechnical Institute at the N.I.Lobachevsky State University of Nizhnii Novgorod (National Research University), Nizhnii Novgorod (Russian Federation)
  2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod (Russian Federation)
  3. Belarusian State University, Minsk (Belarus)
Publication Date:
OSTI Identifier:
22375925
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 44; Journal Issue: 4; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; P-N JUNCTIONS; SEMICONDUCTOR LASERS; SUBSTRATES; WAVEGUIDES