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Title: Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells

A model for calculating the power characteristics of laser structures taking into account inhomogeneous excitation of quantum wells (QWs), recombination in the barrier regions, and nonlinear gain effects is developed. It is shown that, with increasing number of QWs, the output power of the Ga{sub 0.8}In{sub 0.2}As/GaAs/InGaP structures at first considerably increases and then slightly decreases. In a wide range of injection currents, the optimal number of QWs is 5 ± 1. The inhomogeneity of QW excitation increases with increasing injection current and decreases the laser power compared to homogeneous excitation. (lasers)
Authors:
;  [1] ;  [2]
  1. Belarusian State University, Minsk (Belarus)
  2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22373692
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 43; Journal Issue: 11; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EFFICIENCY; EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASERS; NONLINEAR PROBLEMS; QUANTUM WELLS