Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells

Journal Article · Sat Nov 30 00:00:00 EST 2013 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2013V043N11ABEH015193· OSTI ID:22373692

Ushakov, D V; Afonenko, A A ^[1]; Aleshkin, V Ya ^[2]

---

1. Belarusian State University, Minsk (Belarus)
2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod (Russian Federation)

A model for calculating the power characteristics of laser structures taking into account inhomogeneous excitation of quantum wells (QWs), recombination in the barrier regions, and nonlinear gain effects is developed. It is shown that, with increasing number of QWs, the output power of the Ga{sub 0.8}In{sub 0.2}As/GaAs/InGaP structures at first considerably increases and then slightly decreases. In a wide range of injection currents, the optimal number of QWs is 5 ± 1. The inhomogeneity of QW excitation increases with increasing injection current and decreases the laser power compared to homogeneous excitation. (lasers)

• OSTI ID: 22373692
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 43, Issue 11; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EFFICIENCY
EXCITATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
NONLINEAR PROBLEMS
QUANTUM WELLS