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Title: Optical limiting effects in nanostructured silicon carbide thin films

We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at λ = 532 nm (I{sub cl} ∼ 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at λ = 1064 nm (I{sub cl} ∼ 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)
Authors:
; ; ; ;  [1] ;  [2]
  1. Institute of Physics, National Academy of Sciences of Ukraine, Kiev (Ukraine)
  2. Institute for Single Crystals of NAS of Ukraine (Ukraine)
Publication Date:
OSTI Identifier:
22373649
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 43; Journal Issue: 12; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; ABSORPTION; LASER RADIATION; NANOSTRUCTURES; NONLINEAR PROBLEMS; PHOTONS; SILICON CARBIDES; THIN FILMS