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Title: Nanostructuring of single-crystal silicon carbide by picosecond UV laser radiation

Surface nanostructures are produced on single-crystal 4H-SiC by laser ablation in water using a Nd : YAG laser (355-nm wavelength, 10-ps pulse duration) as a radiation source. The morphology of the nanostructured surface and the nanostructure size distribution are examined in relation to the energy density of the incident laser beam. The potential of the described process for improving the luminosity of light-emitting diodes on silicon carbide substrates is discussed. (letters)
Authors:
; ;  [1]
  1. Wave Research Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22373643
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 43; Journal Issue: 12; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ENERGY DENSITY; HYDROGEN 4; LIGHT EMITTING DIODES; MONOCRYSTALS; NANOSTRUCTURES; NEODYMIUM LASERS; PULSES; RADIATION SOURCES; SILICON CARBIDES; SUBSTRATES