Nanostructuring of single-crystal silicon carbide by picosecond UV laser radiation
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Wave Research Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Surface nanostructures are produced on single-crystal 4H-SiC by laser ablation in water using a Nd : YAG laser (355-nm wavelength, 10-ps pulse duration) as a radiation source. The morphology of the nanostructured surface and the nanostructure size distribution are examined in relation to the energy density of the incident laser beam. The potential of the described process for improving the luminosity of light-emitting diodes on silicon carbide substrates is discussed. (letters)
- OSTI ID:
- 22373643
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 43, Issue 12; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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