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Title: EUV light source with high brightness at 13.5 nm

The results of the studies on the development of a highbrightness radiation source in the extreme ultraviolet (EUV) range are presented. The source is intended for using in projection EUV lithography, EUV mask inspection, for the EUV metrology, etc. Novel approaches to creating a light source on the basis of Z-pinch in xenon allowed the maximal brightness [130 W(mm{sup 2} sr){sup -1}] to be achieved in the vicinity of plasma for this type of radiation sources within the 2% spectral band centred at the wavelength of 13.5 nm that corresponds to the maximal reflection of multilayer Mo/Si mirrors. In this spectral band the radiation power achieves 190 W in the solid angle of 2π at a pulse repetition rate of 1.9 kHz and an electric power of 20 kW, injected into the discharge. (laser applications and other topics in quantum electronics)
Authors:
; ;  [1] ;  [2] ;  [3]
  1. State Research Center of Russian Federation 'Troitsk Institute for Innovation and Fusion Research', Troitsk, Moscow Region (Russian Federation)
  2. Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow (Russian Federation)
  3. EUV Labs, Ltd., Troitsk, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22373343
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 44; Journal Issue: 11; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; BRIGHTNESS; ELECTRIC POWER; EXTREME ULTRAVIOLET RADIATION; LASERS; LAYERS; LIGHT SOURCES; MOLYBDENUM; PLASMA; PULSES; QUANTUM ELECTRONICS; REFLECTION; SILICON; XENON