skip to main content

Title: Turn on of new electronic paths in Fe-SiO{sub 2} granular thin film

The electrical properties of Fe-SiO{sub 2} have been studied in the low-field regime (eΔV ≪ k{sub B}T), varying the injected current and the bias potential. Superparamagnetism and a resistance drop of 4400 Ω (for a voltage variation of 15 V) were observed at room temperature. This resistance drop increased at lower temperatures. The electrical properties were described with the “Mott variable range hopping” model explaining the behavior of the electrical resistance and the electronic localization length as due to the activation of new electronic paths between more distant grains. This non-ohmic resistance at room temperature can be important for properties dependent of electrical current (magnetoresistance, Hall effect, and magnetoimpedance).
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [2]
  1. Physics Institute–IF-UFRGS, C.P. 15051, 91501–970, Porto Alegre, Rio Grande do Sul (Brazil)
  2. (Brazil)
Publication Date:
OSTI Identifier:
22351134
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; HALL EFFECT; IRON; MAGNETORESISTANCE; SILICON OXIDES; SUPERPARAMAGNETISM; TEMPERATURE RANGE 0273-0400 K; THIN FILMS