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Title: Interfacial characterization and electrical properties of Ni–GaSb contacts

The microstructural characterization of Ni–GaSb junctions in samples annealed at 300 °C, 350 °C, and 400 °C in a N{sub 2} atmosphere was elucidated using transmission electron microscopy in conjunction with energy-dispersive spectrometry, nanobeam electron diffraction, and grazing-incident X-ray diffraction. Only the NiSb(Ga) phase is formed at the interface of Ni/GaSb when the annealing temperature is below 350 °C. However, three phases—NiSb, Ni{sub 2}Ga{sub 3}, and NiSb(Ga)—are formed simultaneously at the interface between Ni/GaSb when the annealing temperature is increased to 400 °C, which causes a significant increase in the sheet resistance of the Ni–GaSb alloy. These results indicate that the annealing temperature of the Ni/GaSb structure should be maintained below 350 °C for the formation of low-resistance metal Ni/GaSb contacts in GaSb-based p-type metal-oxide-semiconductor field-effect transistors.
Authors:
;  [1]
  1. National Nano Device Laboratories, National Applied Research Laboratories (NARLabs), Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22351129
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; ELECTRON DIFFRACTION; FIELD EFFECT TRANSISTORS; GALLIUM ANTIMONIDES; INTERFACES; MICROSTRUCTURE; MOSFET; NICKEL; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION