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Title: Enhancing interfacial conductivity and spatial charge confinement of LaAlO{sub 3}/SrTiO{sub 3} heterostructures via strain engineering

We explored the possibility of enhancing interfacial conductivity and spatial charge confinement of LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) heterostructure (HS) via strain engineering using first-principles electronic structure calculations. We found that applying a tensile strain on the STO substrate along the ab-plane can significantly enhance the interfacial conductivity, magnetic moments, and the spatial charge confinement of the HS system. In contrast, a compressive strain can dilute the interfacial charge carrier density, make the mobile charges transfer to deep STO substrate, and weaken the spatial charge confinement along the c-axis. Hence, we propose that applying a tensile strain can be an effective way to enhance the interfacial conductivity and magnetism of STO-based HS systems.
Authors:
; ;  [1]
  1. Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448 (United States)
Publication Date:
OSTI Identifier:
22351128
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; CHARGE CARRIERS; COMPUTERIZED SIMULATION; CONFINEMENT; DENSITY; ELECTRONIC STRUCTURE; LANTHANUM COMPOUNDS; MAGNETIC MOMENTS; MAGNETISM; STRAINS; STRONTIUM TITANATES; SUBSTRATES