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Title: Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO{sub 2}/amorphous-YIG bilayer is formed and welds the garnet to silicon.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3]
  1. CNRS-LPN, Route de Nozay, F-91460 Marcoussis (France)
  2. (France)
  3. Laboratoire de Magnetisme de Bretagne, 6 avenue Le Gorgeu, 29238 Brest Cedex 3 (France)
Publication Date:
OSTI Identifier:
22351127
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; FERRITE GARNETS; FILMS; GARNETS; IRON OXIDES; LAYERS; SILICON; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; WELDED JOINTS; X-RAY SPECTROSCOPY; YTTRIUM COMPOUNDS