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Title: Regrowth-free single-mode quantum cascade lasers with power consumption below 1 W

We report on single-mode distributed-feedback quantum cascade lasers emitting at 4.8 μm with continuous-wave threshold power consumption as low as 0.76 W at 20 °C and 0.98 W at 50 °C. Following growth of the laser active region and semiconductor cladding layers by a single molecular beam epitaxy process, devices with 4-μm-wide ridges and vertical sidewall gratings were fabricated using plasma etching and standard dielectric and metal deposition processes. In terms of mode stability, output power, and efficiency, we show that lasers with 1-mm cavity length and high-reflectivity back-facet coatings can match the performance of buried heterostructure devices, but with the advantage of requiring only a single epitaxial growth step.
Authors:
; ; ;  [1]
  1. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States)
Publication Date:
OSTI Identifier:
22351126
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CLADDING; COATINGS; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; EFFICIENCY; EQUIPMENT; ETCHING; FEEDBACK; LASERS; LAYERS; METALS; MOLECULAR BEAM EPITAXY; PLASMA; REFLECTIVITY; SEMICONDUCTOR MATERIALS; STABILITY