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Title: Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy

We study by microphotoluminescence the optical properties of single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. We show evidences of both excitonic and multiexcitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287 ± 8 ps. Owing to large band offsets and a large exciton binding energy, the excitonic recombinations of single zinc-blende GaN/AlN quantum dots can be observed up to 300 K.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [1] ;  [4]
  1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
  2. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
  3. Department Physik, Universität Paderborn, 33095 Paderborn (Germany)
  4. (Japan)
Publication Date:
OSTI Identifier:
22351122
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; BINDING ENERGY; CRYSTAL STRUCTURE; DROPLETS; EPITAXY; GALLIUM NITRIDES; LIFETIME; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS