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Title: Electrically tunable hot-silicon terahertz attenuator

We have developed a continuously tunable, broadband terahertz attenuator with a transmission tuning range greater than 10{sup 3}. Attenuation tuning is achieved electrically, by simply changing the DC voltage applied to a heating wire attached to a bulk silicon wafer, which controls its temperature between room temperature and ∼550 K, with the corresponding free-carrier density adjusted between ∼10{sup 11 }cm{sup −3} and ∼10{sup 17 }cm{sup −3}. This “hot-silicon”-based terahertz attenuator works most effectively at 450–550 K (corresponding to a DC voltage variation of only ∼7 V) and completely shields terahertz radiation above 550 K in a frequency range of 0.1–2.5 THz. Both intrinsic and doped silicon wafers were tested and demonstrated to work well as a continuously tunable attenuator. All behaviors can be understood quantitatively via the free-carrier Drude model taking into account thermally activated intrinsic carriers.
Authors:
 [1] ; ;  [2] ;  [1] ;  [3] ;  [3]
  1. Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005 (United States)
  2. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22351121
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATTENUATION; CARRIER DENSITY; CARRIERS; DOPED MATERIALS; ELECTRIC POTENTIAL; FREQUENCY RANGE; NANOWIRES; SILICON; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THZ RANGE; TRANSMISSION; TUNING