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Title: Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In{sub 0.12}Ga{sub 0.88}N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. Université Grenoble Alpes, 38000 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22351120
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; CATHODOLUMINESCENCE; CONVERSION; CRYSTAL DEFECTS; EFFICIENCY; GALLIUM NITRIDES; INDIUM COMPOUNDS; NANOSTRUCTURES; PHOTOVOLTAIC CELLS; QUANTUM WELLS; RED SHIFT; RELAXATION; SOLAR CELLS; STRAINS; THICKNESS