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Title: Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu{sub 2}ZnSnS{sub 4} based solar cell

The structure of the electronic energy levels of a single phase Cu{sub 2}ZnSnS{sub 4} film, as confirmed by Raman Scattering and x-ray diffraction, is investigated through a dependence on the excitation power of the photoluminescence (PL). The behavior of the observed asymmetric band, with a peak energy at ∼1.22 eV, is compared with two theoretical models: (i) fluctuating potentials and (ii) donor-acceptor pair transitions. It is shown that the radiative recombination channels in the Cu-poor film are strongly influenced by tail states in the bandgap as a consequence of a heavy doping and compensation levels. The contribution of the PL for the evaluation of secondary phases is also highlighted.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4]
  1. Departamento de Física and I3N, Universidade de Aveiro, 3810-193 Aveiro (Portugal)
  2. (Portugal)
  3. INL - International Iberian Nanotechnology Laboratory, Laboratory for Nanostructured Solar Cells (LaNaSC), Av. Mestre José Veiga, 4715-330 Braga (Portugal)
  4. Departamento de Física, Universidade Federal de Minas Gerais, 30123-970 Belo Horizonte, Minas Gerais (Brazil)
Publication Date:
OSTI Identifier:
22350997
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; COPPER COMPOUNDS; EXCITATION; FILMS; FLUCTUATIONS; LOW-SULFUR COAL; PHOTOLUMINESCENCE; RAMAN EFFECT; RECOMBINATION; SOLAR CELLS; TIN COMPOUNDS; X-RAY DIFFRACTION; ZINC COMPOUNDS