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Title: Qualifying composition dependent p and n self-doping in CH{sub 3}NH{sub 3}PbI{sub 3}

We report the observation of self-doping in perovskite. CH{sub 3}NH{sub 3}PbI{sub 3} was found to be either n- or p-doped by changing the ratio of methylammonium halide (MAI) and lead iodine (PbI{sub 2}) which are the two precursors for perovskite formation. MAI-rich and PbI{sub 2}-rich perovskite films are p and n self-doped, respectively. Thermal annealing can convert the p-type perovskite to n-type by removing MAI. The carrier concentration varied as much as six orders of magnitude. A clear correlation between doping level and device performance was also observed.
Authors:
; ;  [1] ; ; ;  [2] ;  [3]
  1. Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656 (United States)
  2. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083 (China)
  3. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)
Publication Date:
OSTI Identifier:
22350992
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMMONIUM COMPOUNDS; ANNEALING; CARRIERS; CONCENTRATION RATIO; CORRELATIONS; DOPED MATERIALS; EQUIPMENT; LEAD IODIDES; N-TYPE CONDUCTORS; PEROVSKITE; PRECURSOR; P-TYPE CONDUCTORS; THIN FILMS