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Title: Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.
Authors:
 [1] ;  [2] ;  [3]
  1. School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749 (Korea, Republic of)
  2. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  3. Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22350991
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BONDING; CARRIER MOBILITY; CHEMICAL BONDS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; EQUIPMENT; GALLIUM COMPOUNDS; HYDROGEN IONS; INDIUM COMPOUNDS; OXYGEN COMPOUNDS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSISTORS; ZINC COMPOUNDS